SKU:90112085245
IRF 530 MFET N-Channel Transistor
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
IRF 530 MFET N-Channel TransistorIRF 530 MFET FEATURES Dynamic dV dt rating Repetitive avalanche rated N channel Fast switching Ease of paralleling Simple drive requirements TECHNICAL Drain Source Voltage (VDS) : 100V Gate Source Voltage (VGS) : 20V Continuous Drain Current @TC = 25 C : 14A Continuous Drain Current @ TC = 100 C : 10 A. Single Pulse Avalanche Energy : 69mJ Maximum Power Dissipation @TC = 25 C ; 88W Soldering Temperature, for 10 seconds (1. 6mm from case) 300 C
Power Distribution Systems
to adjust the screen brightness in different light conditions
500 RPM 12 V DC geared motors for robotics applications
DSI display port for connecting the Raspberry Pi touch screen display
⁍Operating Voltage: 3V to 18V
Useful for measuring each cell voltage
Current Itsm: 25A
Power Supply Filtering
gas leak detection
24V connection: One cable connection 2
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Warm start time: 35s average
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- Fast: 2-3 business days
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